Accurate validation of experimental results of interdiffused InGaAs/GaAs strained quantum wells by suitable numerical methods

In this paper, we make use of the Galerkin method along with the Green function method to analyse structures of InGaAs/GaAs strained quantum wells. The optical absorption coefficient is calculated and the achieved agreement with published experimental data is significantly better than previously rep...

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Bibliographic Details
Published in:Superlattices and microstructures 2001-08, Vol.30 (2), p.61-67
Main Authors: Prol, Miguel, Moredo-Araújo, Alfonso, Javier Fraile-Peláez, F., Gómez-Alcalá, Rafael
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
InGaAs/GaAs quantum well, interdiffusion, strain, Green’s function, Galerkin method
Physics
Quantum wells
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Summary:In this paper, we make use of the Galerkin method along with the Green function method to analyse structures of InGaAs/GaAs strained quantum wells. The optical absorption coefficient is calculated and the achieved agreement with published experimental data is significantly better than previously reported predictions, thus providing a stronger confirmation of the validity and accuracy of the theoretical model. In addition, the computational efficiency is remarkably improved with the developed procedure.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.2001.0991