Characterization of the Interface between the Top Si and Buried Oxide in Separation by Implanted Oxygen Wafers

The electrical characteristics of the top Si-buried oxide interface in low-dose separation by implanted oxygen (SIMOX) wafers have been investigated from high-frequency and quasi-static capacitance–voltage ( C – V ) measurements of the buried metal oxide semiconductor (MOS) diodes proposed here. The...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001, Vol.40 (9R), p.5211-5216
Main Authors: Takahashi, Mitsutoshi, Nakashima, Sadao, Kodate, Junichi, Ohno, Terukazu
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The electrical characteristics of the top Si-buried oxide interface in low-dose separation by implanted oxygen (SIMOX) wafers have been investigated from high-frequency and quasi-static capacitance–voltage ( C – V ) measurements of the buried metal oxide semiconductor (MOS) diodes proposed here. The structure of the interface has been also analyzed using cross-sectional transmission electron microscopy (XTEM). SIMOX wafers with an internal thermal oxidation (ITOX) process have a fixed charge density of 2.7×10 10 cm -2 and an interface trap density of 5×10 9 cm -2 eV -1 . XTEM analysis revealed the undulation of the interface with ITOX is about 1 lattice. From the small fixed charge density and the smooth interface, we conclude that the strain field in the top Si-buried oxide interface is small, and comparable to that of thermal oxide-Si interface. The obtained results indicate that ITOX-SIMOX wafers are useful for the fabrication of fully depleted MOSFETs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.5211