Correlated structural and electronic properties of microcrystalline silicon films deposited at low temperature by catalytic CVD

This paper is a synthesis of the work performed in LPICM-Palaiseau on the catalytic chemical vapor deposition (Cat-CVD) process. First of all, some technological problems, such as increasing the filament lifetime, have been solved, which were necessary for the stability and homogeneity of the silico...

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Bibliographic Details
Published in:Thin solid films 2001-09, Vol.395 (1-2), p.157-162
Main Author: BOUREE, J. E
Format: Article
Language:English
Subjects:
Catalytic chemical vapor deposition (Cat-CVD)
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microcrystalline silicon on glass
Physics
Thin films
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Summary:This paper is a synthesis of the work performed in LPICM-Palaiseau on the catalytic chemical vapor deposition (Cat-CVD) process. First of all, some technological problems, such as increasing the filament lifetime, have been solved, which were necessary for the stability and homogeneity of the silicon layers deposited. A study was then conducted on the main deposition parameters in order to deposit dense microcrystalline silicon layers (as compared with amorphous silicon) at low substrate temperature (
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(01)01247-0