Creep behaviour of MoSi sub 2 -SiC and MoSi sub 2 -HfO sub 2

Creep resistance of two MoSi sub 2 -based materials containing SiC and HfO sub 2 particles, respectively, in ambient atmosphere was studied in the temperature range 1100-1400 deg C under a load of 100 MPa. The microstructure and its response to high-temperature load were investigated by TEM using th...

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Bibliographic Details
Published in:Materials letters 2001-12, Vol.51 (6), p.485-489
Main Authors: Hvizdos, P, Besterci, M, Ballokova, B, Scholl, R, Bohm, A
Format: Article
Language:English
Online Access:Get full text
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Summary:Creep resistance of two MoSi sub 2 -based materials containing SiC and HfO sub 2 particles, respectively, in ambient atmosphere was studied in the temperature range 1100-1400 deg C under a load of 100 MPa. The microstructure and its response to high-temperature load were investigated by TEM using the thin foil technique. Comparison of the creep resistance of both materials at each particular testing temperature shows that the performance of MoSi sub 2 -HfO sub 9 is about one order of magnitude better than the other one.
ISSN:0167-577X