Crystallization of 3C-SiC (111) Thin Films Grown on Si (111) Substrates by Post Thermal Annealing

Thermal treatment of SiC thin films grown on p-Si (111) substrates by plasma enhanced chemical vapor deposition was performed to crystallize as-grown amorphous SiC layers. Nomarski optical microscopy and X-ray diffraction measurements showed that the as-grown SiC thin films on p-Si (111) substrates...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-11, Vol.40 (11R), p.6304-6306
Main Authors: Lee, Hae Gwon, Kang, Tae Won, Hong, Sung Ui, Paek, Mun Cheol, Kim, Tae Whan
Format: Article
Language:English
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Summary:Thermal treatment of SiC thin films grown on p-Si (111) substrates by plasma enhanced chemical vapor deposition was performed to crystallize as-grown amorphous SiC layers. Nomarski optical microscopy and X-ray diffraction measurements showed that the as-grown SiC thin films on p-Si (111) substrates were amorphous and that the films annealed at 1100°C were crystallized with 3C-SiC (111) orientation. The results of X-ray photoelectron spectroscopy measurements showed that in the crystallized films, good stoichiometry was realized for the components of the SiC epilayer. These results indicate that SiC thin films grown on p-Si (111) substrates were crystallized by thermal treatment.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.6304