Integrated microwave photoswitch on silicon

The feasibility of photonic switching of microwave signals is demonstrated for the first time using a monolithically integrated optical waveguide in silicon technology. The performance of the microwave integrated switch, illuminated either by a fiber or by the integrated optical waveguide, was measu...

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Bibliographic Details
Published in:Solid-state electronics 1998-01, Vol.42 (1), p.101-106
Main Authors: Chouteau, S, Cabon, B, Boussey, J
Format: Article
Language:English
Online Access:Get full text
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Summary:The feasibility of photonic switching of microwave signals is demonstrated for the first time using a monolithically integrated optical waveguide in silicon technology. The performance of the microwave integrated switch, illuminated either by a fiber or by the integrated optical waveguide, was measured in the 1-15 GHz waveband and was found to be identical in both cases, proving the success of the monolithic integration. The optical power required for a 3 dB commutation at 10 GHz is as low as 1 mW at a wavelength of 0.82 mu m in a Silicon-On-Insulator (SOI) type structure. Higher on/off ratios were obtained from a similar device made on a bulk silicon substrate. This photoswitch may find applications in phase controlled antennas and radar systems.
ISSN:0038-1101
DOI:10.1016/S0038-1101(97)00186-X