Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability

We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, I nr, from the electroluminescence power–voltage–current characteristics. In InGaAs/AlGaAs ( λ=0.98 μm) laser diodes th...

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Bibliographic Details
Published in:Solid-state electronics 1998-11, Vol.42 (11), p.1939-1945
Main Authors: Beister, G., Maege, J., Erbert, G., Tränkle, G.
Format: Article
Language:English
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Summary:We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, I nr, from the electroluminescence power–voltage–current characteristics. In InGaAs/AlGaAs ( λ=0.98 μm) laser diodes these currents have been identified as being primarily related to surface recombination, which increases during facet degradation, and can be decreased by a sulphur treatment. An analysis of the logarithmic change of I nr with facet degradation or passivation shows a typical maximum or minimum respectively, which can be interpreted as a change in charge and density of a certain surface state. This technique permits relaxation processes to be analyzed quantitatively.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(98)00178-6