Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability

We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, I nr, from the electroluminescence power–voltage–current characteristics. In InGaAs/AlGaAs ( λ=0.98 μm) laser diodes th...

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Published in:Solid-state electronics 1998-11, Vol.42 (11), p.1939-1945
Main Authors: Beister, G., Maege, J., Erbert, G., Tränkle, G.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c338t-b80546524cb64ef7364b54bc982a8da6d99ac7895adcfc115bca46909579b073
cites cdi_FETCH-LOGICAL-c338t-b80546524cb64ef7364b54bc982a8da6d99ac7895adcfc115bca46909579b073
container_end_page 1945
container_issue 11
container_start_page 1939
container_title Solid-state electronics
container_volume 42
creator Beister, G.
Maege, J.
Erbert, G.
Tränkle, G.
description We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, I nr, from the electroluminescence power–voltage–current characteristics. In InGaAs/AlGaAs ( λ=0.98 μm) laser diodes these currents have been identified as being primarily related to surface recombination, which increases during facet degradation, and can be decreased by a sulphur treatment. An analysis of the logarithmic change of I nr with facet degradation or passivation shows a typical maximum or minimum respectively, which can be interpreted as a change in charge and density of a certain surface state. This technique permits relaxation processes to be analyzed quantitatively.
doi_str_mv 10.1016/S0038-1101(98)00178-6
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26686417</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0038110198001786</els_id><sourcerecordid>26686417</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-b80546524cb64ef7364b54bc982a8da6d99ac7895adcfc115bca46909579b073</originalsourceid><addsrcrecordid>eNqFkMFLwzAYxYMoOKd_gpCT6KEuaZM0OckYOgdDD9s9pMlXiHTtTNLB_nvbTbwKH7zv8N6D90PonpJnSqiYbQgpZEaH_1HJJ0JoKTNxgSZUlirLGeGXaPJnuUY3MX4RQnJByQRtPro2C8Z5k_wBsO1DgDZh3-JVuzTzOJs3o-DGRAjY-c5BxGY4vAMT-wC4q3FtLCQck6l849PxFl3Vpolw96tTtH173S7es_XncrWYrzNbFDJllSScCZ4zWwkGdVkIVnFWWSVzI50RTiljS6m4cba2lPLKGiYUUbxUFSmLKXo41-5D991DTHrno4WmMS10fdS5EFIwOhr52WhDF2OAWu-D35lw1JTokaA-EdQjHq2kPhHUYsi9nHMwjDh4CDpaD60F5wPYpF3n_2n4ARwkd3E</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26686417</pqid></control><display><type>article</type><title>Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability</title><source>ScienceDirect Freedom Collection</source><creator>Beister, G. ; Maege, J. ; Erbert, G. ; Tränkle, G.</creator><creatorcontrib>Beister, G. ; Maege, J. ; Erbert, G. ; Tränkle, G.</creatorcontrib><description>We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, I nr, from the electroluminescence power–voltage–current characteristics. In InGaAs/AlGaAs ( λ=0.98 μm) laser diodes these currents have been identified as being primarily related to surface recombination, which increases during facet degradation, and can be decreased by a sulphur treatment. An analysis of the logarithmic change of I nr with facet degradation or passivation shows a typical maximum or minimum respectively, which can be interpreted as a change in charge and density of a certain surface state. This technique permits relaxation processes to be analyzed quantitatively.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/S0038-1101(98)00178-6</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><ispartof>Solid-state electronics, 1998-11, Vol.42 (11), p.1939-1945</ispartof><rights>1998 Elsevier Science Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-b80546524cb64ef7364b54bc982a8da6d99ac7895adcfc115bca46909579b073</citedby><cites>FETCH-LOGICAL-c338t-b80546524cb64ef7364b54bc982a8da6d99ac7895adcfc115bca46909579b073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Beister, G.</creatorcontrib><creatorcontrib>Maege, J.</creatorcontrib><creatorcontrib>Erbert, G.</creatorcontrib><creatorcontrib>Tränkle, G.</creatorcontrib><title>Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability</title><title>Solid-state electronics</title><description>We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, I nr, from the electroluminescence power–voltage–current characteristics. In InGaAs/AlGaAs ( λ=0.98 μm) laser diodes these currents have been identified as being primarily related to surface recombination, which increases during facet degradation, and can be decreased by a sulphur treatment. An analysis of the logarithmic change of I nr with facet degradation or passivation shows a typical maximum or minimum respectively, which can be interpreted as a change in charge and density of a certain surface state. This technique permits relaxation processes to be analyzed quantitatively.</description><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNqFkMFLwzAYxYMoOKd_gpCT6KEuaZM0OckYOgdDD9s9pMlXiHTtTNLB_nvbTbwKH7zv8N6D90PonpJnSqiYbQgpZEaH_1HJJ0JoKTNxgSZUlirLGeGXaPJnuUY3MX4RQnJByQRtPro2C8Z5k_wBsO1DgDZh3-JVuzTzOJs3o-DGRAjY-c5BxGY4vAMT-wC4q3FtLCQck6l849PxFl3Vpolw96tTtH173S7es_XncrWYrzNbFDJllSScCZ4zWwkGdVkIVnFWWSVzI50RTiljS6m4cba2lPLKGiYUUbxUFSmLKXo41-5D991DTHrno4WmMS10fdS5EFIwOhr52WhDF2OAWu-D35lw1JTokaA-EdQjHq2kPhHUYsi9nHMwjDh4CDpaD60F5wPYpF3n_2n4ARwkd3E</recordid><startdate>19981101</startdate><enddate>19981101</enddate><creator>Beister, G.</creator><creator>Maege, J.</creator><creator>Erbert, G.</creator><creator>Tränkle, G.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19981101</creationdate><title>Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability</title><author>Beister, G. ; Maege, J. ; Erbert, G. ; Tränkle, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-b80546524cb64ef7364b54bc982a8da6d99ac7895adcfc115bca46909579b073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Beister, G.</creatorcontrib><creatorcontrib>Maege, J.</creatorcontrib><creatorcontrib>Erbert, G.</creatorcontrib><creatorcontrib>Tränkle, G.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Beister, G.</au><au>Maege, J.</au><au>Erbert, G.</au><au>Tränkle, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability</atitle><jtitle>Solid-state electronics</jtitle><date>1998-11-01</date><risdate>1998</risdate><volume>42</volume><issue>11</issue><spage>1939</spage><epage>1945</epage><pages>1939-1945</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, I nr, from the electroluminescence power–voltage–current characteristics. In InGaAs/AlGaAs ( λ=0.98 μm) laser diodes these currents have been identified as being primarily related to surface recombination, which increases during facet degradation, and can be decreased by a sulphur treatment. An analysis of the logarithmic change of I nr with facet degradation or passivation shows a typical maximum or minimum respectively, which can be interpreted as a change in charge and density of a certain surface state. This technique permits relaxation processes to be analyzed quantitatively.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S0038-1101(98)00178-6</doi><tpages>7</tpages></addata></record>
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title Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T13%3A20%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Non-radiative%20current%20in%20InGaAs/AlGaAs%20laser%20diodes%20as%20a%20measure%20of%20facet%20stability&rft.jtitle=Solid-state%20electronics&rft.au=Beister,%20G.&rft.date=1998-11-01&rft.volume=42&rft.issue=11&rft.spage=1939&rft.epage=1945&rft.pages=1939-1945&rft.issn=0038-1101&rft.eissn=1879-2405&rft_id=info:doi/10.1016/S0038-1101(98)00178-6&rft_dat=%3Cproquest_cross%3E26686417%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c338t-b80546524cb64ef7364b54bc982a8da6d99ac7895adcfc115bca46909579b073%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=26686417&rft_id=info:pmid/&rfr_iscdi=true