Development of a slurry employing a unique silica abrasive for the CMP of Cu damascene structures

We describe the development and examine the performance of a slurry containing an organic acid salt, a silica abrasive obtained from the hydrolysis of ethyl silicate (TEOS), and a passivating agent for the chemical mechanical planarization (CMP) of Cu damascene structures. The study is performed on...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 2001-06, Vol.148 (6), p.G321-G325
Main Authors: WRSCHKA, P, HERNANDEZ, J, OEHRLEIN, G. S, NEGRYCH, J. A, HAAG, G, RAU, P, CURRIE, J. E
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metals. Metallurgy
Physics
Polishing
Surface treatments
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We describe the development and examine the performance of a slurry containing an organic acid salt, a silica abrasive obtained from the hydrolysis of ethyl silicate (TEOS), and a passivating agent for the chemical mechanical planarization (CMP) of Cu damascene structures. The study is performed on full (200 mm) wafers coated with blanket Cu films to examine removal rates and uniformity and on partial wafers to investigate the CMP of Cu damascene structures. The silica slurry shows moderately high removal rates, good uniformity values, low defectivity, and excellent ability to remove the Ta liner. It is demonstrated that despite the fairly low Cu to SiO sub 2 selectivity values, a severe erosion of the SiO sub 2 does not occur. Because of the effective removal of the liner material, long overpolishing times become unnecessary, thus, spacer erosion is avoided. Corrosion induced defects are prevented by the addition of a passivating agent.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1370969