EFFECT OF GAS COMPOSITION ON TiN THIN-FILM FABRICATION IN N2/H2/Ar/TiCl4 INDUCTIVELY COUPLED PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM

TiN films were deposited in a N2/H2/Ar/TiCl4 rf inductively coupled plasma and the effect of gas composition on the properties of the TiN films were analyzed through investigation of the plasmas with a Langmuir single probe and a mass spectrometer. The quality of TiN films depended on the concentrat...

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Published in:Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 8, pp. 4819-4824. 2001 Part 1. Vol. 40, no. 8, pp. 4819-4824. 2001, 2001, Vol.40 (8), p.4819-4824
Main Authors: Jang, S-S, Lee, W-J
Format: Article
Language:English
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Summary:TiN films were deposited in a N2/H2/Ar/TiCl4 rf inductively coupled plasma and the effect of gas composition on the properties of the TiN films were analyzed through investigation of the plasmas with a Langmuir single probe and a mass spectrometer. The quality of TiN films depended on the concentration of H and N radicals. H2 had the effect of removing Cl from the TiCl4 and reducing N radicals in the plasma although the plasma density and electron temperature were not significantly affected. Accordingly, high-quality TiN films with low Cl content and good electric properties were obtained with 10-20% of H2. With the addition of Ar, plasma density increased and the dissociation of the precursors was enhanced; as a result, the production of N and H radicals was enhanced and the quality of TiN films was improved. 20 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.40.4819