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Optical properties of CdS nanocrystalline films prepared by a precipitation technique
CdS semiconductor films of different crystalline size have been grown by a precipitation technique. The crystalline sizes were controlled by the reaction time period, pH/temperature of the solution and thickness of the deposit. From the optical absorption, the band gap of bulk-CdS is found to be 2.4...
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Published in: | Thin solid films 1998-06, Vol.322 (1), p.21-27 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | CdS semiconductor films of different crystalline size have been grown by a precipitation technique. The crystalline sizes were controlled by the reaction time period, pH/temperature of the solution and thickness of the deposit. From the optical absorption, the band gap of bulk-CdS is found to be 2.405 eV and is increased to 2.97 eV for nanocrystalline samples of average crystalline size 5.0 nm estimated from the blue shift. AFM analysis were performed to estimate the average crystalline size. Photoluminescence studies of CdS nanocrystalline samples show a red shift. The intensity of red luminescence (∼1.8 eV) decreases and its peak position shifts to the lower energy upon increasing the particle size. Photovoltage as a function of crystalline size/band gap has been studied using a photoelectrochemical solar cell configuration Ti/CdS/S
2−, S
2
2−/Pt. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/S0040-6090(97)01015-8 |