Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices

Triggering homogeneity of 0.35 mu m and 0.18 mu n technology grounded-gate nMOSFET electrostatic discharge (ESD) protection devices is investigated as a function of pulse risetime and current stress level. The current distribution along the device width is analysed using a backside interferometric t...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronics and reliability 2001, Vol.41 (9), p.1385-1390
Main Authors: Litzenberger, M., Pichler, R., Bychikhin, S., Pogany, D., Gornik, E., Esmark, K., Gossner, H.
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Triggering homogeneity of 0.35 mu m and 0.18 mu n technology grounded-gate nMOSFET electrostatic discharge (ESD) protection devices is investigated as a function of pulse risetime and current stress level. The current distribution along the device width is analysed using a backside interferometric thermal mapping technique. Differences in the triggering behaviour for different pulse risetimes have been found and have been attributed to a dU/dt triggering effect. Pulse-to-pulse instabilities in the triggering place have also been revealed at low stress currents using single shot measurements. copyright 2001 Elsevier Science Ltd. All rights reserved.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(01)00146-9