EFFECTS OF OXYGEN CONCENTRATION ON CHARACTERISTICS OF RF-SPUTTERED In2O3-ZnO THIN FILMS

The effects of O concentration on the electrical and optical properties of In2O3-ZnO films are investigated. In2O3-ZnO films deposited under the pure Ar gas show a resistivity of about 3.8 x 10-4 OHM.cm, comparable to that of ITO films (approx 10-4 OHM.cm), and an average transmittance of over 90% i...

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Published in:Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 3A, pp. 1429-1430. 2001 Part 1. Vol. 40, no. 3A, pp. 1429-1430. 2001, 2001, Vol.40 (3A), p.1429-1430
Main Authors: Park, S-H, Kim, H-M, Rhee, B-R, Ko, E-Y, Shon, S-H
Format: Article
Language:English
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Summary:The effects of O concentration on the electrical and optical properties of In2O3-ZnO films are investigated. In2O3-ZnO films deposited under the pure Ar gas show a resistivity of about 3.8 x 10-4 OHM.cm, comparable to that of ITO films (approx 10-4 OHM.cm), and an average transmittance of over 90% in the visible range. Thin films deposited at higher O concentration also show larger absorption at about 400-500 nm compared to those deposited at the O concentration of 0.0%. Authors propose that it is desirable to use pure Ar gas to obtain films with lower resistivity and higher transmittance in the visible range. In the case of films deposited with a higher O concentration, resistivity decreases with increasing heat treatment temperature. 8 refs.
ISSN:0021-4922
DOI:10.1143/jjap.40.1429