Optical emission spectroscopy on pulsed-DC plasmas used for TiN depositions

The plasma-assisted chemical vapour deposition process in a large-scale industrial plant for coating of TiN on tool steels was investigated by optical emission spectroscopy. Several atomic lines and molecular bands were identified. A parametric study of the dependence of bias voltage, total pressure...

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Bibliographic Details
Published in:Surface & coatings technology 1998-04, Vol.102 (1), p.41-49
Main Authors: Mogensen, K.S, Eskildsen, S.S, Mathiasen, C, Bøttiger, J
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
OES
PACVD
Physics
Pulsed-DC
TiN
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Summary:The plasma-assisted chemical vapour deposition process in a large-scale industrial plant for coating of TiN on tool steels was investigated by optical emission spectroscopy. Several atomic lines and molecular bands were identified. A parametric study of the dependence of bias voltage, total pressure and gas flows, H 2, N 2, Ar and TiCl 4, on the plasma characteristics was performed to gain understanding of the influence of the parameters on the deposition process. With the change of process parameters, large variations in the emitted light, corresponding to changes in plasma conditions, were observed. In the parameter range studied, the deposition rate depends linearly on the N + 2 signal when varying the pressure and the N 2 flow, whereas no clear correlation between the OES signal and the deposition rate could be found for variations of the other parameters.
ISSN:0257-8972
1879-3347
DOI:10.1016/S0257-8972(97)00529-X