Role of Yttria-stabilized Zirconia Produced by Ion-beam-assisted Deposition on the Properties of RuO2 on SiO2/Si

Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si....

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Bibliographic Details
Published in:Journal of materials research 1998-09, Vol.13 (9), p.2461-2464
Main Authors: Jia, Q. X., Arendt, P., Groves, J. R., Fan, Y., Roper, J. M., Foltyn, S. R.
Format: Article
Language:English
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Summary:Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si. The biaxially oriented RuO2 had a room-temperature resistivity of 37 μΔ-cm and residual resistivity ratio above 2. We then deposited Ba0.5Sr0.5TiO3 thin films on RuO2/IBAD-YSZ/SiO2/Si. The Ba0.5Sr0.5TiO3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.
ISSN:0884-2914
2044-5326
DOI:10.1557/JMR.1998.0344