Fabrication of GaN photonic crystals for 400 nm wavelength

We report on results of the fabrication and the micro-reflectance measurement of GaN photonic crystals. The etching performance of GaN has been studied with a conventional reactive ion etching system and SiCl 4 plasma. We obtained an etch rate of 100 nm/min and etching depth of 600 nm for dense GaN...

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Bibliographic Details
Published in:Microelectronic engineering 2001-09, Vol.57, p.843-849
Main Authors: Peyrade, David, Chen, Yong, Manin-Ferlazzo, Laurence, Lebib, Amira, Grandjean, Nicolas, Coquillat, Dominique, Legros, René, Lascaray, Jean-Paul
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Nanofabrication
Optical materials
Optics
Photonic bandgap materials
Photonic crystals
Physics
Reactive ion etching
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Summary:We report on results of the fabrication and the micro-reflectance measurement of GaN photonic crystals. The etching performance of GaN has been studied with a conventional reactive ion etching system and SiCl 4 plasma. We obtained an etch rate of 100 nm/min and etching depth of 600 nm for dense GaN pillars. With graphite lattice of 270 nm period we observed a high reflection peak in the region of 400 nm wavelengths, depending strongly on the incident light polarization, which is in a good agreement with the theoretical calculation.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(01)00441-5