Ferroelectric Thin Films Prepared by Backside Pulsed Ion-Beam Evaporation

Ferroelectric (PbTiO 3 or Pb(Zr, Ti)O 3 ) thin films have been successfully prepared on Si(100) or pyrex glasses by backside deposition of intense pulsed ion beam evaporation. The ion beam parameters were typically as follows: beam energy=1.3 MeV, ion-current density on target=0.7 kA/cm 2 and pulse...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001, Vol.40 (2S), p.1049-1051
Main Authors: Sonegawa, Tomihiro, Arakaki, Toshiki, Maehama, Takehiro, Jiang, Weihua, Yatsui, Kiyoshi
Format: Article
Language:English
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Summary:Ferroelectric (PbTiO 3 or Pb(Zr, Ti)O 3 ) thin films have been successfully prepared on Si(100) or pyrex glasses by backside deposition of intense pulsed ion beam evaporation. The ion beam parameters were typically as follows: beam energy=1.3 MeV, ion-current density on target=0.7 kA/cm 2 and pulse duration=50 ns. The composition of the thin films was in good agreement with that of the original target. The relative dielectric constant at 1 kHz was obtained to be 20, while that obtained by normal front side deposition was 150.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.1049