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A highly linear single balanced mixer based on heterojunction interband tunneling diode
In this paper, a compact and highly linear monolithic-microwave integrated circuit (MMIC) single balanced mixer based on heterojunction interband tunnel diode (HITD) technology working at 1.8 GHz is described. The prototype consists of a pair of HITDs biased at 0 V and a lumped-element directional c...
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Published in: | IEEE transactions on microwave theory and techniques 2001-12, Vol.49 (12), p.2437-2445 |
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container_issue | 12 |
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container_title | IEEE transactions on microwave theory and techniques |
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creator | Cidronali, A. Collodi, G. Deshpande, M.R. El-Zein, N. Nair, V. Manes, G. Goronkin, H. |
description | In this paper, a compact and highly linear monolithic-microwave integrated circuit (MMIC) single balanced mixer based on heterojunction interband tunnel diode (HITD) technology working at 1.8 GHz is described. The prototype consists of a pair of HITDs biased at 0 V and a lumped-element directional coupler with arbitrary impedance terminations. The HITDs are in the InGaAs/InAlAs material system lattice matched to InP. The relevant feature of the mixer is the linearity due to the quasi-square-law dc current-voltage (IV) characteristics exhibited by the device around zero voltage. A qualitative treatment of the third-order intermodulation product and the conversion loss as a function of the HITDs IV characteristic and the embedding impedance is provided. The design techniques along with a detailed experimental validation are also provided. The prototype working in down-conversion mode, exhibited an third-order intercept point power level of +17.5 dBm, a conversion loss of 11 dB and a 1-dB compression point of +7 dBm at the operative frequency of 1.8 GHz with a +5-dBm local-oscillator drive level. |
doi_str_mv | 10.1109/22.971633 |
format | article |
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The prototype consists of a pair of HITDs biased at 0 V and a lumped-element directional coupler with arbitrary impedance terminations. The HITDs are in the InGaAs/InAlAs material system lattice matched to InP. The relevant feature of the mixer is the linearity due to the quasi-square-law dc current-voltage (IV) characteristics exhibited by the device around zero voltage. A qualitative treatment of the third-order intermodulation product and the conversion loss as a function of the HITDs IV characteristic and the embedding impedance is provided. The design techniques along with a detailed experimental validation are also provided. The prototype working in down-conversion mode, exhibited an third-order intercept point power level of +17.5 dBm, a conversion loss of 11 dB and a 1-dB compression point of +7 dBm at the operative frequency of 1.8 GHz with a +5-dBm local-oscillator drive level.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/22.971633</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Balancing ; Conversion ; Diodes ; Directional couplers ; Heterojunctions ; Impedance ; Indium compounds ; Indium gallium arsenide ; Integrated circuit technology ; Intermodulation ; Linearity ; Mixers ; MMICs ; Monolithic integrated circuits ; Prototypes</subject><ispartof>IEEE transactions on microwave theory and techniques, 2001-12, Vol.49 (12), p.2437-2445</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2001</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-8f462479319aea43c83c20b0125f3d053ec0fd7e12c2007040fc98a2710edb333</citedby><cites>FETCH-LOGICAL-c399t-8f462479319aea43c83c20b0125f3d053ec0fd7e12c2007040fc98a2710edb333</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/971633$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Cidronali, A.</creatorcontrib><creatorcontrib>Collodi, G.</creatorcontrib><creatorcontrib>Deshpande, M.R.</creatorcontrib><creatorcontrib>El-Zein, N.</creatorcontrib><creatorcontrib>Nair, V.</creatorcontrib><creatorcontrib>Manes, G.</creatorcontrib><creatorcontrib>Goronkin, H.</creatorcontrib><title>A highly linear single balanced mixer based on heterojunction interband tunneling diode</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>In this paper, a compact and highly linear monolithic-microwave integrated circuit (MMIC) single balanced mixer based on heterojunction interband tunnel diode (HITD) technology working at 1.8 GHz is described. The prototype consists of a pair of HITDs biased at 0 V and a lumped-element directional coupler with arbitrary impedance terminations. The HITDs are in the InGaAs/InAlAs material system lattice matched to InP. The relevant feature of the mixer is the linearity due to the quasi-square-law dc current-voltage (IV) characteristics exhibited by the device around zero voltage. A qualitative treatment of the third-order intermodulation product and the conversion loss as a function of the HITDs IV characteristic and the embedding impedance is provided. The design techniques along with a detailed experimental validation are also provided. The prototype working in down-conversion mode, exhibited an third-order intercept point power level of +17.5 dBm, a conversion loss of 11 dB and a 1-dB compression point of +7 dBm at the operative frequency of 1.8 GHz with a +5-dBm local-oscillator drive level.</description><subject>Balancing</subject><subject>Conversion</subject><subject>Diodes</subject><subject>Directional couplers</subject><subject>Heterojunctions</subject><subject>Impedance</subject><subject>Indium compounds</subject><subject>Indium gallium arsenide</subject><subject>Integrated circuit technology</subject><subject>Intermodulation</subject><subject>Linearity</subject><subject>Mixers</subject><subject>MMICs</subject><subject>Monolithic integrated circuits</subject><subject>Prototypes</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqN0UtLxDAQB_AgCq6Pg1dPxYPooeskafM4yuILFrwoHks2ne5m6aaatKDf3iwVDx7UU_JPfgzDDCEnFKaUgr5ibKolFZzvkAktS5lrIWGXTACoynWhYJ8cxLhOsShBTcjLdbZyy1X7kbXOowlZdH7ZYrYwrfEW62zj3jGkGNO989kKewzdevC2dyk6n-LC-DrrB-8x1VhmtetqPCJ7jWkjHn-dh-T59uZpdp_PH-8eZtfz3HKt-1w1hWCF1Jxqg6bgVnHLYAGUlQ2voeRooaklUpaeQUIBjdXKMEkB6wXn_JCcj3VfQ_c2YOyrjYsW29Q9dkOsmOIgtCj-hkKWkkv-Lyik2MKLXyEVkvI05UIlevaDrrsh-DSYSqm0FF3SLbockQ1djAGb6jW4jQkfFYVqu9yKsWpcbrKno3WI-O2-Pj8Bv0ec_A</recordid><startdate>20011201</startdate><enddate>20011201</enddate><creator>Cidronali, A.</creator><creator>Collodi, G.</creator><creator>Deshpande, M.R.</creator><creator>El-Zein, N.</creator><creator>Nair, V.</creator><creator>Manes, G.</creator><creator>Goronkin, H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope></search><sort><creationdate>20011201</creationdate><title>A highly linear single balanced mixer based on heterojunction interband tunneling diode</title><author>Cidronali, A. ; Collodi, G. ; Deshpande, M.R. ; El-Zein, N. ; Nair, V. ; Manes, G. ; Goronkin, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-8f462479319aea43c83c20b0125f3d053ec0fd7e12c2007040fc98a2710edb333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Balancing</topic><topic>Conversion</topic><topic>Diodes</topic><topic>Directional couplers</topic><topic>Heterojunctions</topic><topic>Impedance</topic><topic>Indium compounds</topic><topic>Indium gallium arsenide</topic><topic>Integrated circuit technology</topic><topic>Intermodulation</topic><topic>Linearity</topic><topic>Mixers</topic><topic>MMICs</topic><topic>Monolithic integrated circuits</topic><topic>Prototypes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cidronali, A.</creatorcontrib><creatorcontrib>Collodi, G.</creatorcontrib><creatorcontrib>Deshpande, M.R.</creatorcontrib><creatorcontrib>El-Zein, N.</creatorcontrib><creatorcontrib>Nair, V.</creatorcontrib><creatorcontrib>Manes, G.</creatorcontrib><creatorcontrib>Goronkin, H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cidronali, A.</au><au>Collodi, G.</au><au>Deshpande, M.R.</au><au>El-Zein, N.</au><au>Nair, V.</au><au>Manes, G.</au><au>Goronkin, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A highly linear single balanced mixer based on heterojunction interband tunneling diode</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2001-12-01</date><risdate>2001</risdate><volume>49</volume><issue>12</issue><spage>2437</spage><epage>2445</epage><pages>2437-2445</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>In this paper, a compact and highly linear monolithic-microwave integrated circuit (MMIC) single balanced mixer based on heterojunction interband tunnel diode (HITD) technology working at 1.8 GHz is described. The prototype consists of a pair of HITDs biased at 0 V and a lumped-element directional coupler with arbitrary impedance terminations. The HITDs are in the InGaAs/InAlAs material system lattice matched to InP. The relevant feature of the mixer is the linearity due to the quasi-square-law dc current-voltage (IV) characteristics exhibited by the device around zero voltage. A qualitative treatment of the third-order intermodulation product and the conversion loss as a function of the HITDs IV characteristic and the embedding impedance is provided. The design techniques along with a detailed experimental validation are also provided. The prototype working in down-conversion mode, exhibited an third-order intercept point power level of +17.5 dBm, a conversion loss of 11 dB and a 1-dB compression point of +7 dBm at the operative frequency of 1.8 GHz with a +5-dBm local-oscillator drive level.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/22.971633</doi><tpages>9</tpages></addata></record> |
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subjects | Balancing Conversion Diodes Directional couplers Heterojunctions Impedance Indium compounds Indium gallium arsenide Integrated circuit technology Intermodulation Linearity Mixers MMICs Monolithic integrated circuits Prototypes |
title | A highly linear single balanced mixer based on heterojunction interband tunneling diode |
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