High-field approximations of the energy-transport model for semiconductors with non-parabolic band structure

An asymptotic analysis of the energy-transport equations for semiconductors with the scaled mean free path as small parameter is performed. Using a variant of the Chapman-Enskog method, high-field drift-diffusion models are derived. Furthermore, the dependence of the macroscopic parameters such as t...

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Bibliographic Details
Published in:Zeitschrift für angewandte Mathematik und Physik 2001-11, Vol.52 (6), p.1053-1070
Main Authors: Degond, P., Jüngel, A.
Format: Article
Language:English
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Summary:An asymptotic analysis of the energy-transport equations for semiconductors with the scaled mean free path as small parameter is performed. Using a variant of the Chapman-Enskog method, high-field drift-diffusion models are derived. Furthermore, the dependence of the macroscopic parameters such as the mobility and the diffusivity are investigated for parabolic and nonparabolic band approximations (in the sense of Kane). Explicit expressions of the physical parameters are obtained. (Author)
ISSN:0044-2275
DOI:10.1007/PL00001583