High-Power CW Operation of GaInAsP/InP Superluminescent Light-Emitting Diode with Tapered Active Region

We have developed a 1.55 µm superluminescent light-emitting diode (SLD) with a tapered active region. We achieved high power and broadband operation demonstrating an output power of 330 mW under cw operation at 7°C. We examined the beam profile of output light by measuring its near field and far fie...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001-07, Vol.40 (7A), p.L678-L680
Main Authors: Yamatoya, Takeshi, Sekiguchi, Shigeaki, Koyama, Fumio, Iga, Kenichi
Format: Article
Language:English
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Summary:We have developed a 1.55 µm superluminescent light-emitting diode (SLD) with a tapered active region. We achieved high power and broadband operation demonstrating an output power of 330 mW under cw operation at 7°C. We examined the beam profile of output light by measuring its near field and far field patterns. It was found that the output light shows a fundamental transversal mode profile in both horizontal and vertical directions. This device will be applicable to spectrum-sliced multiwavelength light sources for use in wavelength division multiplexing optical communication systems as well as in lightwave sensing.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.L678