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High Temperature Elastic Constant Prediction of Some Group III-Nitrides
Thermoelastic properties are important for modeling thermal residual stresses and for optimizing the growth conditions of semiconductor thin films. Thermal expansions of AlN and GaN have been evaluated and predicted by us earlier [1][2]. Here, high temperature elastic constants are estimated empiric...
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Published in: | MRS Internet journal of nitride semiconductor research 2001, Vol.6, p.3-3, Article e3 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Thermoelastic properties are important for modeling thermal residual stresses and for optimizing the growth conditions of semiconductor thin films. Thermal expansions of AlN and GaN have been evaluated and predicted by us earlier [1][2]. Here, high temperature elastic constants are estimated empirically from corresponding state relationships and data from other hexagonal Grimm-Sommerfeld compounds. This information together with our earlier thermal expansion data will further improve capabilities for calculating thermal residual stresses in various semiconductor thin films. |
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ISSN: | 1092-5783 1092-5783 |
DOI: | 10.1557/S1092578300000156 |