ELECTRICAL CHARACTERISTICS OF Al/CeO2(200)/Si(100) AND Al/CeO2(111)/Si(100) METAL-INSULATOR-SEMICONDUCTOR STRUCTURE

C-V and I-V characteristics of Al/CeO2/Si(100) metal-insulator-semiconductor structures were dependent on the crystal orientations of CeO2 thin films, which were deposited by radio-frequency magnetron sputtering. The C-V curve for the Al/CeO2/Si(100) structure made with CeO2 with (200)-preferred ori...

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Published in:Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 6A, pp. L564-L566. 2001 Part 2. Vol. 40, no. 6A, pp. L564-L566. 2001, 2001-06, Vol.40 (6A), p.L564-L566
Main Authors: Kim, L, Kim, J, Lee, H, Jung, D, Roh, Y
Format: Article
Language:English
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Summary:C-V and I-V characteristics of Al/CeO2/Si(100) metal-insulator-semiconductor structures were dependent on the crystal orientations of CeO2 thin films, which were deposited by radio-frequency magnetron sputtering. The C-V curve for the Al/CeO2/Si(100) structure made with CeO2 with (200)-preferred orientation (referred to as CeO2(200)) did not show any notable hysteresis, while the Al/CeO2/Si(100) structure made with CeO2 with (111)-preferred orientation (referred to as CeO2(111)) showed a counter-clockwise hysteresis, whose width was as high as approx 1.5 V. The hysteresis difference between Al/CeO2(200)/Si(100) and Al/CeO2(111)/Si(100) is thought due to the difference in the preferred orientation of the CeO2 layer, and thus the stress between the CeO2 thin film and the Si substrate. The Al/CeO2(111)/Si(100) structure with CeO2 of larger grains showed larger leakage current than the Al/CeO2(200)/Si(100) structure with CeO2 of smaller grains. 10 refs.
ISSN:0021-4922
DOI:10.1143/jjap.40.L564