ELECTRICAL CHARACTERISTICS OF Al/CeO2(200)/Si(100) AND Al/CeO2(111)/Si(100) METAL-INSULATOR-SEMICONDUCTOR STRUCTURE

C-V and I-V characteristics of Al/CeO2/Si(100) metal-insulator-semiconductor structures were dependent on the crystal orientations of CeO2 thin films, which were deposited by radio-frequency magnetron sputtering. The C-V curve for the Al/CeO2/Si(100) structure made with CeO2 with (200)-preferred ori...

Full description

Saved in:
Bibliographic Details
Published in:Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 6A, pp. L564-L566. 2001 Part 2. Vol. 40, no. 6A, pp. L564-L566. 2001, 2001-06, Vol.40 (6A), p.L564-L566
Main Authors: Kim, L, Kim, J, Lee, H, Jung, D, Roh, Y
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page L566
container_issue 6A
container_start_page L564
container_title Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 6A, pp. L564-L566. 2001
container_volume 40
creator Kim, L
Kim, J
Lee, H
Jung, D
Roh, Y
description C-V and I-V characteristics of Al/CeO2/Si(100) metal-insulator-semiconductor structures were dependent on the crystal orientations of CeO2 thin films, which were deposited by radio-frequency magnetron sputtering. The C-V curve for the Al/CeO2/Si(100) structure made with CeO2 with (200)-preferred orientation (referred to as CeO2(200)) did not show any notable hysteresis, while the Al/CeO2/Si(100) structure made with CeO2 with (111)-preferred orientation (referred to as CeO2(111)) showed a counter-clockwise hysteresis, whose width was as high as approx 1.5 V. The hysteresis difference between Al/CeO2(200)/Si(100) and Al/CeO2(111)/Si(100) is thought due to the difference in the preferred orientation of the CeO2 layer, and thus the stress between the CeO2 thin film and the Si substrate. The Al/CeO2(111)/Si(100) structure with CeO2 of larger grains showed larger leakage current than the Al/CeO2(200)/Si(100) structure with CeO2 of smaller grains. 10 refs.
doi_str_mv 10.1143/jjap.40.L564
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_26767316</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26767316</sourcerecordid><originalsourceid>FETCH-LOGICAL-j332t-da15ee42d6e9d926813b4a7b401b153c31b291562628bf3b73a3972eaac658f43</originalsourceid><addsrcrecordid>eNpFjkFPgzAYhnvQxDm9-QM4mXmA9ftaChybrnMkbCRQzksZJRlBN-32_8Vo9PS-T57kzUvIE9AIgLPlMNhzxGlUxILfkBmlCCHPEO_IvffDhCLmMCNeF1qZKleyCNRGVlIZXeW1yVUdlOtAjkvlSlwgpS_L-riAKQO5W_0JAPgXW21kEea7uimkKauw1ttclbtVoyYKalNNpan0A7nt7ejd42_OSbPWRm3Conz9PhIOjOEl7CzEznHshMu6DEUKrOU2aTmFFmJ2YNBiBrFAgWnbszZhlmUJOmsPIk57zubk-Wf3_Hn6uDp_2b8d_cGNo313p6vfo0hEwkCwL-0vUL0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26767316</pqid></control><display><type>article</type><title>ELECTRICAL CHARACTERISTICS OF Al/CeO2(200)/Si(100) AND Al/CeO2(111)/Si(100) METAL-INSULATOR-SEMICONDUCTOR STRUCTURE</title><source>IOPscience journals</source><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Kim, L ; Kim, J ; Lee, H ; Jung, D ; Roh, Y</creator><creatorcontrib>Kim, L ; Kim, J ; Lee, H ; Jung, D ; Roh, Y</creatorcontrib><description>C-V and I-V characteristics of Al/CeO2/Si(100) metal-insulator-semiconductor structures were dependent on the crystal orientations of CeO2 thin films, which were deposited by radio-frequency magnetron sputtering. The C-V curve for the Al/CeO2/Si(100) structure made with CeO2 with (200)-preferred orientation (referred to as CeO2(200)) did not show any notable hysteresis, while the Al/CeO2/Si(100) structure made with CeO2 with (111)-preferred orientation (referred to as CeO2(111)) showed a counter-clockwise hysteresis, whose width was as high as approx 1.5 V. The hysteresis difference between Al/CeO2(200)/Si(100) and Al/CeO2(111)/Si(100) is thought due to the difference in the preferred orientation of the CeO2 layer, and thus the stress between the CeO2 thin film and the Si substrate. The Al/CeO2(111)/Si(100) structure with CeO2 of larger grains showed larger leakage current than the Al/CeO2(200)/Si(100) structure with CeO2 of smaller grains. 10 refs.</description><identifier>ISSN: 0021-4922</identifier><identifier>DOI: 10.1143/jjap.40.L564</identifier><language>eng</language><ispartof>Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 6A, pp. L564-L566. 2001, 2001-06, Vol.40 (6A), p.L564-L566</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Kim, L</creatorcontrib><creatorcontrib>Kim, J</creatorcontrib><creatorcontrib>Lee, H</creatorcontrib><creatorcontrib>Jung, D</creatorcontrib><creatorcontrib>Roh, Y</creatorcontrib><title>ELECTRICAL CHARACTERISTICS OF Al/CeO2(200)/Si(100) AND Al/CeO2(111)/Si(100) METAL-INSULATOR-SEMICONDUCTOR STRUCTURE</title><title>Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 6A, pp. L564-L566. 2001</title><description>C-V and I-V characteristics of Al/CeO2/Si(100) metal-insulator-semiconductor structures were dependent on the crystal orientations of CeO2 thin films, which were deposited by radio-frequency magnetron sputtering. The C-V curve for the Al/CeO2/Si(100) structure made with CeO2 with (200)-preferred orientation (referred to as CeO2(200)) did not show any notable hysteresis, while the Al/CeO2/Si(100) structure made with CeO2 with (111)-preferred orientation (referred to as CeO2(111)) showed a counter-clockwise hysteresis, whose width was as high as approx 1.5 V. The hysteresis difference between Al/CeO2(200)/Si(100) and Al/CeO2(111)/Si(100) is thought due to the difference in the preferred orientation of the CeO2 layer, and thus the stress between the CeO2 thin film and the Si substrate. The Al/CeO2(111)/Si(100) structure with CeO2 of larger grains showed larger leakage current than the Al/CeO2(200)/Si(100) structure with CeO2 of smaller grains. 10 refs.</description><issn>0021-4922</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNpFjkFPgzAYhnvQxDm9-QM4mXmA9ftaChybrnMkbCRQzksZJRlBN-32_8Vo9PS-T57kzUvIE9AIgLPlMNhzxGlUxILfkBmlCCHPEO_IvffDhCLmMCNeF1qZKleyCNRGVlIZXeW1yVUdlOtAjkvlSlwgpS_L-riAKQO5W_0JAPgXW21kEea7uimkKauw1ttclbtVoyYKalNNpan0A7nt7ejd42_OSbPWRm3Conz9PhIOjOEl7CzEznHshMu6DEUKrOU2aTmFFmJ2YNBiBrFAgWnbszZhlmUJOmsPIk57zubk-Wf3_Hn6uDp_2b8d_cGNo313p6vfo0hEwkCwL-0vUL0</recordid><startdate>20010601</startdate><enddate>20010601</enddate><creator>Kim, L</creator><creator>Kim, J</creator><creator>Lee, H</creator><creator>Jung, D</creator><creator>Roh, Y</creator><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20010601</creationdate><title>ELECTRICAL CHARACTERISTICS OF Al/CeO2(200)/Si(100) AND Al/CeO2(111)/Si(100) METAL-INSULATOR-SEMICONDUCTOR STRUCTURE</title><author>Kim, L ; Kim, J ; Lee, H ; Jung, D ; Roh, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j332t-da15ee42d6e9d926813b4a7b401b153c31b291562628bf3b73a3972eaac658f43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, L</creatorcontrib><creatorcontrib>Kim, J</creatorcontrib><creatorcontrib>Lee, H</creatorcontrib><creatorcontrib>Jung, D</creatorcontrib><creatorcontrib>Roh, Y</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 6A, pp. L564-L566. 2001</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, L</au><au>Kim, J</au><au>Lee, H</au><au>Jung, D</au><au>Roh, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>ELECTRICAL CHARACTERISTICS OF Al/CeO2(200)/Si(100) AND Al/CeO2(111)/Si(100) METAL-INSULATOR-SEMICONDUCTOR STRUCTURE</atitle><jtitle>Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 6A, pp. L564-L566. 2001</jtitle><date>2001-06-01</date><risdate>2001</risdate><volume>40</volume><issue>6A</issue><spage>L564</spage><epage>L566</epage><pages>L564-L566</pages><issn>0021-4922</issn><abstract>C-V and I-V characteristics of Al/CeO2/Si(100) metal-insulator-semiconductor structures were dependent on the crystal orientations of CeO2 thin films, which were deposited by radio-frequency magnetron sputtering. The C-V curve for the Al/CeO2/Si(100) structure made with CeO2 with (200)-preferred orientation (referred to as CeO2(200)) did not show any notable hysteresis, while the Al/CeO2/Si(100) structure made with CeO2 with (111)-preferred orientation (referred to as CeO2(111)) showed a counter-clockwise hysteresis, whose width was as high as approx 1.5 V. The hysteresis difference between Al/CeO2(200)/Si(100) and Al/CeO2(111)/Si(100) is thought due to the difference in the preferred orientation of the CeO2 layer, and thus the stress between the CeO2 thin film and the Si substrate. The Al/CeO2(111)/Si(100) structure with CeO2 of larger grains showed larger leakage current than the Al/CeO2(200)/Si(100) structure with CeO2 of smaller grains. 10 refs.</abstract><doi>10.1143/jjap.40.L564</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 6A, pp. L564-L566. 2001, 2001-06, Vol.40 (6A), p.L564-L566
issn 0021-4922
language eng
recordid cdi_proquest_miscellaneous_26767316
source IOPscience journals; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
title ELECTRICAL CHARACTERISTICS OF Al/CeO2(200)/Si(100) AND Al/CeO2(111)/Si(100) METAL-INSULATOR-SEMICONDUCTOR STRUCTURE
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T12%3A51%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=ELECTRICAL%20CHARACTERISTICS%20OF%20Al/CeO2(200)/Si(100)%20AND%20Al/CeO2(111)/Si(100)%20METAL-INSULATOR-SEMICONDUCTOR%20STRUCTURE&rft.jtitle=Jpn.J.Appl.Phys%20,Part%202.%20Vol.%2040,%20no.%206A,%20pp.%20L564-L566.%202001&rft.au=Kim,%20L&rft.date=2001-06-01&rft.volume=40&rft.issue=6A&rft.spage=L564&rft.epage=L566&rft.pages=L564-L566&rft.issn=0021-4922&rft_id=info:doi/10.1143/jjap.40.L564&rft_dat=%3Cproquest%3E26767316%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-j332t-da15ee42d6e9d926813b4a7b401b153c31b291562628bf3b73a3972eaac658f43%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=26767316&rft_id=info:pmid/&rfr_iscdi=true