Electron-beam excited plasma etching reactor with polyimide interface film

An electron-beam excited plasma reactor was developed, where an electron-beam was transmitted into the reactor through an interface film from the source. The interface film of polyimide was abraded during the electron-beam transmission and the interface material was deposited on a substrate in the r...

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Bibliographic Details
Published in:Thin solid films 2001-05, Vol.386 (2), p.142-146
Main Authors: Morita, Shinzo, Phatak, Girish J, Mori, Yuki
Format: Article
Language:English
Subjects:
Abrasion
CF 4
Electron-beam excited plasma
Etching
Exact sciences and technology
Monte Carlo simulation
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma applications
Plasma production and heating
Plasma sources
Polyimide
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Summary:An electron-beam excited plasma reactor was developed, where an electron-beam was transmitted into the reactor through an interface film from the source. The interface film of polyimide was abraded during the electron-beam transmission and the interface material was deposited on a substrate in the reactor. The abrasion phenomena were studied experimentally by using Monte Carlo simulation of electron-beam transmission in the film. At the condition of minimized abrasion, stable etching of the Si wafer in CF 4 was realized under a negative bias condition.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(00)01665-5