Electron-beam excited plasma etching reactor with polyimide interface film

An electron-beam excited plasma reactor was developed, where an electron-beam was transmitted into the reactor through an interface film from the source. The interface film of polyimide was abraded during the electron-beam transmission and the interface material was deposited on a substrate in the r...

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Published in:Thin solid films 2001-05, Vol.386 (2), p.142-146
Main Authors: Morita, Shinzo, Phatak, Girish J, Mori, Yuki
Format: Article
Language:English
Subjects:
Abrasion
CF 4
Electron-beam excited plasma
Etching
Exact sciences and technology
Monte Carlo simulation
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma applications
Plasma production and heating
Plasma sources
Polyimide
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cited_by cdi_FETCH-LOGICAL-c368t-5d5fa87b6ef99ebd5e72f9c9472cdce61a9571ca9168647aa8046fabc6cba9373
cites cdi_FETCH-LOGICAL-c368t-5d5fa87b6ef99ebd5e72f9c9472cdce61a9571ca9168647aa8046fabc6cba9373
container_end_page 146
container_issue 2
container_start_page 142
container_title Thin solid films
container_volume 386
creator Morita, Shinzo
Phatak, Girish J
Mori, Yuki
description An electron-beam excited plasma reactor was developed, where an electron-beam was transmitted into the reactor through an interface film from the source. The interface film of polyimide was abraded during the electron-beam transmission and the interface material was deposited on a substrate in the reactor. The abrasion phenomena were studied experimentally by using Monte Carlo simulation of electron-beam transmission in the film. At the condition of minimized abrasion, stable etching of the Si wafer in CF 4 was realized under a negative bias condition.
doi_str_mv 10.1016/S0040-6090(00)01665-5
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26769962</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609000016655</els_id><sourcerecordid>26769962</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-5d5fa87b6ef99ebd5e72f9c9472cdce61a9571ca9168647aa8046fabc6cba9373</originalsourceid><addsrcrecordid>eNqFkEtLAzEQx4MoWKsfQdiLoofVZB_J5iRS6ouCB_UcZmcnNrKPmmzVfnu3tuhRGBgY_g_mx9ix4BeCC3n5xHnGY8k1P-P8fLjIPM532EgUSseJSsUuG_1K9tlBCG-cc5Ek6Yg9TGvC3ndtXBI0EX2h66mKFjWEBiLqce7a18gTYN_56NP182jR1SvXuIoi1_bkLSBF1tXNIduzUAc62u4xe7mZPk_u4tnj7f3kehZjKos-zqvcQqFKSVZrKqucVGI16kwlWCFJATpXAkELWchMARQ8kxZKlFiCTlU6Zqeb3IXv3pcUetO4gFTX0FK3DCaRSmotk0GYb4TouxA8WbPwrgG_MoKbNTnzQ86ssRg-zJqcyQffybYAAkJtPbTowp854zKVap1_tdHR8O2HI28COmqRKucHqKbq3D9N37rwg1c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26769962</pqid></control><display><type>article</type><title>Electron-beam excited plasma etching reactor with polyimide interface film</title><source>Elsevier</source><creator>Morita, Shinzo ; Phatak, Girish J ; Mori, Yuki</creator><creatorcontrib>Morita, Shinzo ; Phatak, Girish J ; Mori, Yuki</creatorcontrib><description>An electron-beam excited plasma reactor was developed, where an electron-beam was transmitted into the reactor through an interface film from the source. The interface film of polyimide was abraded during the electron-beam transmission and the interface material was deposited on a substrate in the reactor. The abrasion phenomena were studied experimentally by using Monte Carlo simulation of electron-beam transmission in the film. At the condition of minimized abrasion, stable etching of the Si wafer in CF 4 was realized under a negative bias condition.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(00)01665-5</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Abrasion ; CF 4 ; Electron-beam excited plasma ; Etching ; Exact sciences and technology ; Monte Carlo simulation ; Physics ; Physics of gases, plasmas and electric discharges ; Physics of plasmas and electric discharges ; Plasma applications ; Plasma production and heating ; Plasma sources ; Polyimide</subject><ispartof>Thin solid films, 2001-05, Vol.386 (2), p.142-146</ispartof><rights>2001 Elsevier Science B.V.</rights><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-5d5fa87b6ef99ebd5e72f9c9472cdce61a9571ca9168647aa8046fabc6cba9373</citedby><cites>FETCH-LOGICAL-c368t-5d5fa87b6ef99ebd5e72f9c9472cdce61a9571ca9168647aa8046fabc6cba9373</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,778,782,787,788,23913,23914,25123,27907,27908</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=14063672$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Morita, Shinzo</creatorcontrib><creatorcontrib>Phatak, Girish J</creatorcontrib><creatorcontrib>Mori, Yuki</creatorcontrib><title>Electron-beam excited plasma etching reactor with polyimide interface film</title><title>Thin solid films</title><description>An electron-beam excited plasma reactor was developed, where an electron-beam was transmitted into the reactor through an interface film from the source. The interface film of polyimide was abraded during the electron-beam transmission and the interface material was deposited on a substrate in the reactor. The abrasion phenomena were studied experimentally by using Monte Carlo simulation of electron-beam transmission in the film. At the condition of minimized abrasion, stable etching of the Si wafer in CF 4 was realized under a negative bias condition.</description><subject>Abrasion</subject><subject>CF 4</subject><subject>Electron-beam excited plasma</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Monte Carlo simulation</subject><subject>Physics</subject><subject>Physics of gases, plasmas and electric discharges</subject><subject>Physics of plasmas and electric discharges</subject><subject>Plasma applications</subject><subject>Plasma production and heating</subject><subject>Plasma sources</subject><subject>Polyimide</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLAzEQx4MoWKsfQdiLoofVZB_J5iRS6ouCB_UcZmcnNrKPmmzVfnu3tuhRGBgY_g_mx9ix4BeCC3n5xHnGY8k1P-P8fLjIPM532EgUSseJSsUuG_1K9tlBCG-cc5Ek6Yg9TGvC3ndtXBI0EX2h66mKFjWEBiLqce7a18gTYN_56NP182jR1SvXuIoi1_bkLSBF1tXNIduzUAc62u4xe7mZPk_u4tnj7f3kehZjKos-zqvcQqFKSVZrKqucVGI16kwlWCFJATpXAkELWchMARQ8kxZKlFiCTlU6Zqeb3IXv3pcUetO4gFTX0FK3DCaRSmotk0GYb4TouxA8WbPwrgG_MoKbNTnzQ86ssRg-zJqcyQffybYAAkJtPbTowp854zKVap1_tdHR8O2HI28COmqRKucHqKbq3D9N37rwg1c</recordid><startdate>20010515</startdate><enddate>20010515</enddate><creator>Morita, Shinzo</creator><creator>Phatak, Girish J</creator><creator>Mori, Yuki</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20010515</creationdate><title>Electron-beam excited plasma etching reactor with polyimide interface film</title><author>Morita, Shinzo ; Phatak, Girish J ; Mori, Yuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-5d5fa87b6ef99ebd5e72f9c9472cdce61a9571ca9168647aa8046fabc6cba9373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Abrasion</topic><topic>CF 4</topic><topic>Electron-beam excited plasma</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Monte Carlo simulation</topic><topic>Physics</topic><topic>Physics of gases, plasmas and electric discharges</topic><topic>Physics of plasmas and electric discharges</topic><topic>Plasma applications</topic><topic>Plasma production and heating</topic><topic>Plasma sources</topic><topic>Polyimide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Morita, Shinzo</creatorcontrib><creatorcontrib>Phatak, Girish J</creatorcontrib><creatorcontrib>Mori, Yuki</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Morita, Shinzo</au><au>Phatak, Girish J</au><au>Mori, Yuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron-beam excited plasma etching reactor with polyimide interface film</atitle><jtitle>Thin solid films</jtitle><date>2001-05-15</date><risdate>2001</risdate><volume>386</volume><issue>2</issue><spage>142</spage><epage>146</epage><pages>142-146</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>An electron-beam excited plasma reactor was developed, where an electron-beam was transmitted into the reactor through an interface film from the source. The interface film of polyimide was abraded during the electron-beam transmission and the interface material was deposited on a substrate in the reactor. The abrasion phenomena were studied experimentally by using Monte Carlo simulation of electron-beam transmission in the film. At the condition of minimized abrasion, stable etching of the Si wafer in CF 4 was realized under a negative bias condition.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(00)01665-5</doi><tpages>5</tpages></addata></record>
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1879-2731
language eng
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subjects Abrasion
CF 4
Electron-beam excited plasma
Etching
Exact sciences and technology
Monte Carlo simulation
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma applications
Plasma production and heating
Plasma sources
Polyimide
title Electron-beam excited plasma etching reactor with polyimide interface film
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T21%3A50%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron-beam%20excited%20plasma%20etching%20reactor%20with%20polyimide%20interface%20film&rft.jtitle=Thin%20solid%20films&rft.au=Morita,%20Shinzo&rft.date=2001-05-15&rft.volume=386&rft.issue=2&rft.spage=142&rft.epage=146&rft.pages=142-146&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/S0040-6090(00)01665-5&rft_dat=%3Cproquest_cross%3E26769962%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c368t-5d5fa87b6ef99ebd5e72f9c9472cdce61a9571ca9168647aa8046fabc6cba9373%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=26769962&rft_id=info:pmid/&rfr_iscdi=true