ELECTRICAL PROPERTIES OF (1-x)Ta2O5-xTiO2 CRYSTALLINE THIN FILMS PREPARED BY METALORGANIC DECOMPOSITION

Polycrystalline (1-x)Ta2O5-xTiO2 thin films were formed on a Si substrate by metalorganic decomposition (MOD) at an annealing temperature of 900 C. Thin films with 0.92Ta2O5-0.08TiO2 (x=0.08) composition exhibited superior insulating properties compared to other compositions. The main reason for the...

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Published in:Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 3A, pp. 1431-1432. 2001 Part 1. Vol. 40, no. 3A, pp. 1431-1432. 2001, 2001-01, Vol.40 (3A), p.1431-1432
Main Authors: Salam K, M A, Konishi, H, Mizuno, M, Fukuda, H, Nomura, S
Format: Article
Language:English
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Summary:Polycrystalline (1-x)Ta2O5-xTiO2 thin films were formed on a Si substrate by metalorganic decomposition (MOD) at an annealing temperature of 900 C. Thin films with 0.92Ta2O5-0.08TiO2 (x=0.08) composition exhibited superior insulating properties compared to other compositions. The main reason for the improvement in the insulating properties could be the charge compensation of excess O by the TiO2 additive. The leakage current density was < 1 x 10-9A/cm2 up to an applied electric field of 3 MV/cm. The bulk-limited Poole-Frenkel conduction dominates the I-V characteristics. C-V characteristics of these films showed good dielectric properties with a maximum dielectric constant of 16 and a charge-storage density of 42.5 fC/mu m2 at 3 MV/cm. 8 refs.
ISSN:0021-4922
DOI:10.1143/jjap.40.1431