Surface melting in the heteroepitaxial nucleation of diamond on Ni

Surface melting associated with the heteroepitaxial nucleation of diamond on Ni was investigated. Scanning electron microscopy of quenched samples revealed flow patterns and a recrystallized surface morphology. A combination of techniques including in situ optical monitoring, differential thermal an...

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Bibliographic Details
Published in:Journal of crystal growth 1998-04, Vol.187 (1), p.81-88
Main Authors: Yang, P.C, Liu, W, Schlesser, R, Wolden, C.A, Davis, R.F, Prater, J.T, Sitar, Z
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Diamond
Exact sciences and technology
Heteroepitaxial nucleation
Hydrogen
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Nickel
Physics
Surface melting
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Summary:Surface melting associated with the heteroepitaxial nucleation of diamond on Ni was investigated. Scanning electron microscopy of quenched samples revealed flow patterns and a recrystallized surface morphology. A combination of techniques including in situ optical monitoring, differential thermal analysis, Auger depth profile analysis, and cross-section transmission electron microscopy (TEM) analysis were performed to identify the nature of the molten layer. Data obtained from different experiments were in good mutual agreement. All experimental results strongly indicated that a molten Ni–C–H surface layer was involved in the nucleation process. The presence of both carbon and atomic hydrogen played an important role in the depression of the melting point which was measured to be >300°C less than the melting point of pure Ni.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(97)00854-3