Light-induced conductivity in Ar/Al hollow cathode discharge through ArII (4s–4p) transitions and secondary electrons generation

The opto-galvanic signal (OGS) induced through ArII (4s–4p) transitions in Ar/Al hollow cathode discharge (HCD) is studied. The signal is found influenced by Penning's process. The light-induced ionization is calculated as a negligible contribution to the conductivity. The γ-process of ion-seco...

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Bibliographic Details
Published in:Optics communications 2001-07, Vol.194 (4), p.359-365
Main Authors: Zhechev, D., Atanassova, S.
Format: Article
Language:English
Subjects:
Electric discharges
Elementary processes in plasma
Exact sciences and technology
Hollow cathode discharge
Opto-galvanic signal
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Secondary electrons
Spontaneous emission polarization
γ-processes
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Summary:The opto-galvanic signal (OGS) induced through ArII (4s–4p) transitions in Ar/Al hollow cathode discharge (HCD) is studied. The signal is found influenced by Penning's process. The light-induced ionization is calculated as a negligible contribution to the conductivity. The γ-process of ion-secondary electrons generation in HCD is analyzed related to the ionic OGS. The later is ascribed to the light-induced intensification of ion→secondary electron production based on the higher potential energy of the photoexcited Ar + ion.
ISSN:0030-4018
1873-0310
DOI:10.1016/S0030-4018(01)01271-8