Stoichiometric and dielectric properties of BaTiO3 thin films prepared by backside pulsed ion-beam evaporation

The preparation of BaTiO3 thin films was achieved in situ in a vacuum (0.03 Pa) by backside deposition of an intense pulsed ion-beam evaporation. The composition ratio of the thin film prepared under the substrate temperature of 25 C was found to be Ba:Ti:O = 1:1:3, being in good agreement with that...

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Bibliographic Details
Published in:Journal of materials science letters 1998, Vol.17 (19), p.1685-1687
Main Authors: SONEGAWA, T, YATSUI, K
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Dielectric properties of solids and liquids
Dielectric thin films
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Ion and electron beam-assisted deposition
ion plating
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Permittivity (dielectric function)
Physics
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Summary:The preparation of BaTiO3 thin films was achieved in situ in a vacuum (0.03 Pa) by backside deposition of an intense pulsed ion-beam evaporation. The composition ratio of the thin film prepared under the substrate temperature of 25 C was found to be Ba:Ti:O = 1:1:3, being in good agreement with that of the target (very good stoichiometry). The ratio of Ti/Ba was constant in the temperature range of 25-350 C. 17 refs.
ISSN:0261-8028
DOI:10.1023/A:1006699625013