Loading…

A study of rapid photothermal annealing of sputtered lead lanthanum zirconia titanate thin films

In the rapid photothermal annealing technique the surface of the material to be annealed is irradiated with photons with wavelengths less than about 800 nm. PLZT thin films deposited by rf magnetron sputtering were annealed by rapid photothermal annealing, rapid thermal annealing and furnace anneali...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 1998-12, Vol.145 (12), p.4317-4322
Main Authors: CHEN, Y, SINGH, R, LI, G, HAERTLING, G. H
Format: Article
Language:English
Subjects:
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In the rapid photothermal annealing technique the surface of the material to be annealed is irradiated with photons with wavelengths less than about 800 nm. PLZT thin films deposited by rf magnetron sputtering were annealed by rapid photothermal annealing, rapid thermal annealing and furnace annealing. The electrical, ferroelectric and dielectric characteristics were measured and compared for samples annealed by the three techniques. Results show that the samples annealed by rapid photothermal annealing have the lowest leakage current densities, best fatigue properties and smallest size and number of microcracks. High energy photons with wavelengths less than 800 nm play important roles in the processing of high quality PLZT films. 16 refs.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1838957