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Impact of gate oxide nitridation process on 1/ f noise in 0.18 μm CMOS
The aim of this paper is to study the impact of the nitridation techniques on the 1/ f noise performances of dual gate 0.18 μm CMOS transistors. Nitrogen is often introduced to prevent boron penetration in ultrathin oxides especially when BF 2 is used for the PMOS junction implantation, but as a res...
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Published in: | Microelectronics and reliability 2001-12, Vol.41 (12), p.1933-1938 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The aim of this paper is to study the impact of the nitridation techniques on the 1/
f noise performances of dual gate
0.18
μm
CMOS transistors. Nitrogen is often introduced to prevent boron penetration in ultrathin oxides especially when BF
2 is used for the PMOS junction implantation, but as a result the MOS transistor exhibits higher 1/
f noise because of the increased fixed trap density. We show how the nitridation process can be improved in terms of 1/
f noise characteristics, in a fully integrated technology. Projections of the 1/
f noise behaviour for different technologies are also shown, to emphasise how the 1/
f noise becomes an issue when other downscaling properties are considered for analog/RF CMOS applications. |
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ISSN: | 0026-2714 1872-941X |
DOI: | 10.1016/S0026-2714(01)00098-1 |