Study of the ESD behavior of different clamp configurations in a 0.35 μm CMOS technology

At present, submicron technologies, electrostatic discharges (ESD) are one of the major threats to the reliability of ICs. The aim of this paper is to demonstrate that a very good ESD protection level can be achieved provided we can insure a uniform triggering of multifinger NMOS protection devices....

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Bibliographic Details
Published in:Microelectronics and reliability 1998-11, Vol.38 (11), p.1733-1739
Main Authors: Richier, C, Maene, N, Mabboux, G, Bellens, R
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Testing, measurement, noise and reliability
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Summary:At present, submicron technologies, electrostatic discharges (ESD) are one of the major threats to the reliability of ICs. The aim of this paper is to demonstrate that a very good ESD protection level can be achieved provided we can insure a uniform triggering of multifinger NMOS protection devices. This can be done by a gate coupling to the drain, either by a capacitance or by a zener diode. Human body model (HBM) and charged device model (CDM) test results, as well as transmission line measurement (TLM) and light emission results support this finding.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(98)00176-0