Analysis of high-power devices using proton beam induced charge microscopy

Ion beam induced charge microscopy (IBIC microscopy) has been used for several years to analyse various types of semiconductor devices. In this paper the potential of IBIC-microscopy for the analysis of deeply buffed structures of high power devices is discussed. The advantages of the analysis of ch...

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Bibliographic Details
Published in:Microelectronics and reliability 2001-09, Vol.41 (9), p.1519-1524
Main Authors: Zmeck, M., Phang, J., Bettiol, A., Osipowicz, T., Watt, F., Balk, L., Niedernostheide, F.-J., Schulze, H.-J., Falck, E., Barthelmess, R.
Format: Article
Language:English
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Summary:Ion beam induced charge microscopy (IBIC microscopy) has been used for several years to analyse various types of semiconductor devices. In this paper the potential of IBIC-microscopy for the analysis of deeply buffed structures of high power devices is discussed. The advantages of the analysis of charge collection spectra taken under reverse voltages (at around 10% of the design value) are discussed. In this work a high-voltage diode with a field ring structure has been analysed using a 2 MeV proton beam applying bias voltages up to 500 V. copyright 2001 Elsevier Science Ltd. All rights reserved.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(01)00159-7