Temperature distribution near the interface in sapphire crystals grown by EFG and GES methods

This paper presents results of experiments on in situ temperature measurements during sapphire shaped crystal growth. The temperature distribution difference between the crystals grown by EFG (edge-defined, film-fed growth) and GES (growth from an element of shape) methods is considered.

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Bibliographic Details
Published in:Journal of crystal growth 1998-07, Vol.198-199 (1), p.210-214
Main Authors: Krymov, V M, Kurlov, V N, Antonov, P I, Theodore, F, Delepine, J
Format: Article
Language:English
Online Access:Get full text
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Description
Summary:This paper presents results of experiments on in situ temperature measurements during sapphire shaped crystal growth. The temperature distribution difference between the crystals grown by EFG (edge-defined, film-fed growth) and GES (growth from an element of shape) methods is considered.
ISSN:0022-0248