Texture and surface roughness of PRCVD aluminum films

The effects of temperature, substrate type and diluent gas flow trajectories on the film growth rate, surface roughness, crystal orientation, grain size uniformity of tri-isobutyl aluminum sourced chemical vapor deposited (CVD) aluminum films were studied. The films were deposited in a lamp heated,...

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Bibliographic Details
Published in:Thin solid films 1998-11, Vol.332 (1-2), p.312-318
Main Authors: YANG, D, JONNALAGADDA, R, ROGERS, B. R, HILLMAN, J. T, FOSTER, R. F, CALE, T. S
Format: Article
Language:English
Subjects:
Applied sciences
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Solid surfaces and solid-solid interfaces
Structure and morphology
thickness
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The effects of temperature, substrate type and diluent gas flow trajectories on the film growth rate, surface roughness, crystal orientation, grain size uniformity of tri-isobutyl aluminum sourced chemical vapor deposited (CVD) aluminum films were studied. The films were deposited in a lamp heated, single wafer cold-wall reactor using several process sequences. Deposition times were varied from 30-s to 10-min resulting in difference in nucleation densities, texturing, surface roughness, electromigration, growth rates, average grain size.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)01034-7