Novel chamber cleaning method using atomic hydrogen generated by hot catalyzer

A novel chamber cleaning method using atomic hydrogen is proposed. A heated tungsten wire is used as a catalyzer to obtain atomic hydrogen from hydrogen molecular gas, and this atomic hydrogen is used for chamber cleaning, removing amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) fil...

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Bibliographic Details
Published in:Thin solid films 2001-09, Vol.395 (1-2), p.75-77
Main Authors: Uchida, Kenji, Izumi, Akira, Matsumura, Hideki
Format: Article
Language:English
Subjects:
Atomic hydrogen
Catalyzer
Chamber cleaning
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
High etch rate
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Surface cleaning, etching, patterning
Surface treatments
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Summary:A novel chamber cleaning method using atomic hydrogen is proposed. A heated tungsten wire is used as a catalyzer to obtain atomic hydrogen from hydrogen molecular gas, and this atomic hydrogen is used for chamber cleaning, removing amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) films deposited on chamber walls. High rates of etching of a-Si:H (250 nm/min), poly-Si (190 nm/min) and crystalline silicon (100 nm/min) are obtained.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(01)01211-1