In Situ Observation of Native Oxide Growth on a Si(100) Surface Using Grazing Incidence X-Ray Reflectivity and Fourier Transform Infrared Spectrometer

It is well known that native oxide on hydrogen-terminated Si hardly grows in a drying atmosphere. We have developed an in situ observation system using grazing incidence X-ray reflectivity (GIXR) and Fourier transform infrared spectrometer (FTIR). In this study, we investigated the native oxide grow...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2001, Vol.40 (9R), p.5312-5313
Main Authors: Uemura, Satoshi, Fujii, Masanori, Hashimoto, Hideki, Nagai, Naoto
Format: Article
Language:English
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Summary:It is well known that native oxide on hydrogen-terminated Si hardly grows in a drying atmosphere. We have developed an in situ observation system using grazing incidence X-ray reflectivity (GIXR) and Fourier transform infrared spectrometer (FTIR). In this study, we investigated the native oxide growth on hydrogen-terminated p-Si (100) in an actual drying atmosphere, which was prepared to 70 ppm H 2 O under atmospheric pressure at room temperature.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.5312