Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

• Published in: Nano letters 2022-08, Vol.22 (16), p.6816-6824
• Main Authors: Wu, Jianghong, Ma, Hui, Zhong, Chuyu, Wei, Maoliang, Sun, Chunlei, Ye, Yuting, Xu, Yan, Tang, Bo, Luo, Ye, Sun, Boshu, Jian, Jialing, Dai, Hao, Lin, Hongtao, Li, Lan
• Format: Article
• Language: English
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.2c02099

Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe2 with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW·Hz–0.5, a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit·s–1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.