A new generation of power lateral and vertical floating islands MOS structures

In this paper, new vertical and lateral MOS structures are proposed, in which P + layers called floating islands are located in the drift region. These new structures, called “FLIMOS” (floating islands metal–oxide semiconductor) transistors, are based on the FLI–diode concept in which the voltage ha...

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Bibliographic Details
Published in:Microelectronics 2001-05, Vol.32 (5), p.509-516
Main Authors: Morancho, F, Cézac, N, Galadi, A, Zitouni, M, Rossel, P, Peyre-Lavigne, A
Format: Article
Language:English
Subjects:
Breakdown voltage
FLIMOS transistor
Power devices
Specific on-resistance
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Summary:In this paper, new vertical and lateral MOS structures are proposed, in which P + layers called floating islands are located in the drift region. These new structures, called “FLIMOS” (floating islands metal–oxide semiconductor) transistors, are based on the FLI–diode concept in which the voltage handling capability is obtained by many PN junctions in series instead of the conventional diode, where the breakdown voltage is supported by only one PN junction. In the medium voltage range (200–1000 V), the on-state performance of vertical FLIMOSFET is strongly improved when compared to the conventional MOSFET. For instance, for a 900-V vertical FLIMOSFET, a reduction of the specific on-resistance of about 70% relative to the conventional structure and of 40% relative to the silicon limit is observed. But for a 180-V lateral FLIMOSFET, a reduction of 28% relative to the conventional structure is observed, which is not a very significant improvement when compared to medium voltage vertical devices.
ISSN:0026-2692
1879-2391
1879-2391
DOI:10.1016/S0026-2692(01)00023-4