InAs/InGaSb photodetectors grown on GaAs bonded substrates

The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superla...

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Bibliographic Details
Published in:Journal of electronic materials 2001-07, Vol.30 (7), p.798-801
Main Authors: VILELA, M. F, ANSELM, K. A, SOORIAR, N, JOHNSON, J. L, LIN, C. H, BROWN, G. J, MAHALINGAM, K, SAXLER, A, SZMULOWICZ, F
Format: Article
Language:English
Subjects:
Applied sciences
Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
Electronics
Exact sciences and technology
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cut-off wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-001-0059-2