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InAs/InGaSb photodetectors grown on GaAs bonded substrates
The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superla...
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| Published in: | Journal of electronic materials 2001-07, Vol.30 (7), p.798-801 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c330t-6fae76c94be82e682527ec2e6a7f82f860bc77c8d555f947bf3d9fd022b017c3 |
| container_end_page | 801 |
| container_issue | 7 |
| container_start_page | 798 |
| container_title | Journal of electronic materials |
| container_volume | 30 |
| creator | VILELA, M. F ANSELM, K. A SOORIAR, N JOHNSON, J. L LIN, C. H BROWN, G. J MAHALINGAM, K SAXLER, A SZMULOWICZ, F |
| description | The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cut-off wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates. |
| doi_str_mv | 10.1007/s11664-001-0059-2 |
| format | article |
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F ; ANSELM, K. A ; SOORIAR, N ; JOHNSON, J. L ; LIN, C. H ; BROWN, G. J ; MAHALINGAM, K ; SAXLER, A ; SZMULOWICZ, F</creator><creatorcontrib>VILELA, M. F ; ANSELM, K. A ; SOORIAR, N ; JOHNSON, J. L ; LIN, C. H ; BROWN, G. J ; MAHALINGAM, K ; SAXLER, A ; SZMULOWICZ, F</creatorcontrib><description>The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cut-off wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-001-0059-2</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors ; Electronics ; Exact sciences and technology ; Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Optoelectronic devices ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cut-off wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates.</description><subject>Applied sciences</subject><subject>Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 2001-07, Vol.30 (7), p.798-801 |
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| subjects | Applied sciences Bolometer infrared, submillimeter wave, microwave and radiowave receivers and detectors Electronics Exact sciences and technology Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | InAs/InGaSb photodetectors grown on GaAs bonded substrates |
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