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Extra-Large Grains in the Silicon Nitride Ceramics Doped with Yttria and Hafnia
Microstructural development of silicon nitride doped with Y2O3 and HfO2 was investigated to determine how extra‐large grains develop during gas pressure sintering. Grains as long as 200 µm and a few tens of micrometers wide developed at high temperatures (>2173 K) in a fine‐grained matrix contain...
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Published in: | Journal of the American Ceramic Society 1998-07, Vol.81 (7), p.1876-1880 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Microstructural development of silicon nitride doped with Y2O3 and HfO2 was investigated to determine how extra‐large grains develop during gas pressure sintering. Grains as long as 200 µm and a few tens of micrometers wide developed at high temperatures (>2173 K) in a fine‐grained matrix containing a limited amount of liquid which had a poor propensity to spread. A small number of grains could grow quite large before their growth was halted by neighboring grains of comparable size. |
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ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/j.1151-2916.1998.tb02560.x |