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Extra-Large Grains in the Silicon Nitride Ceramics Doped with Yttria and Hafnia

Microstructural development of silicon nitride doped with Y2O3 and HfO2 was investigated to determine how extra‐large grains develop during gas pressure sintering. Grains as long as 200 µm and a few tens of micrometers wide developed at high temperatures (>2173 K) in a fine‐grained matrix contain...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1998-07, Vol.81 (7), p.1876-1880
Main Authors: Park, Dong-Soo, Lee, Soo-Young, Kim, Hai-Doo, Yoo, Byoung-Ju, Kim, Bu-Ahn
Format: Article
Language:English
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Summary:Microstructural development of silicon nitride doped with Y2O3 and HfO2 was investigated to determine how extra‐large grains develop during gas pressure sintering. Grains as long as 200 µm and a few tens of micrometers wide developed at high temperatures (>2173 K) in a fine‐grained matrix containing a limited amount of liquid which had a poor propensity to spread. A small number of grains could grow quite large before their growth was halted by neighboring grains of comparable size.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1998.tb02560.x