An Analytic Expression of Thermal Diffusion Coefficient for the Hydrodynamic Simulation of Semiconductor Devices

A new analytical expression of thermal diffusion coefficient D^T is derived. To the firstorder approximation, it is given by (1 +η)^(-1)(D/Tn) rather than (1-η)(D/Tn) where η=-(Tn/μ*)(□μ*/□Tn) and μ* represents the temperature-dependent bulk mobility. This new transport coefficient is implemented in...

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Bibliographic Details
Published in:VLSI Design 2001-01, Vol.2001 (1-4), p.131-134
Main Authors: Tang, Ting-Wei, Wang, Xinlin, Gan, Haitao, Ieong, Meikei
Format: Article
Language:English
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Summary:A new analytical expression of thermal diffusion coefficient D^T is derived. To the firstorder approximation, it is given by (1 +η)^(-1)(D/Tn) rather than (1-η)(D/Tn) where η=-(Tn/μ*)(□μ*/□Tn) and μ* represents the temperature-dependent bulk mobility. This new transport coefficient is implemented in our 2-D hydrodynamic device simulator and it seems to produce more reasonable results.
ISSN:1065-514X
DOI:10.1155/2001/51736