A 38-GHz push-push oscillator based on 25-GHz f(T) BJT's

We present a 38-GHz push-push oscillator based on low-cost state-of-the-art silicon bipolar junction transistors (BJTs) with transit frequencies of approximately 25 GHz. The push-push principle allows the extension of the usable frequency range of the well-established silicon bipolar technology (wit...

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Bibliographic Details
Published in:IEEE microwave and guided wave letters 1999-04, Vol.9 (4), p.151-153
Main Authors: Sinnesbichler, Franz X, Geltinger, Hans, Olbrich, Gerhard R
Format: Article
Language:English
Online Access:Get full text
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Summary:We present a 38-GHz push-push oscillator based on low-cost state-of-the-art silicon bipolar junction transistors (BJTs) with transit frequencies of approximately 25 GHz. The push-push principle allows the extension of the usable frequency range of the well-established silicon bipolar technology (with its specific advantages, such as, e.g., a low 1/f-noise) into the K and the Ka bands. The circuitry has been fabricated in thin film technology on a 10-mil alumina substrate. The output power of the oscillator is -11.5 dBm with a single-sideband phase noise of -80 dBc/Hz at an offset frequency of 100 kHz. (Author)
ISSN:1051-8207
DOI:10.1109/75.763244