Behaviour of surface states on a GaAs/AlGaAs heterostructure investigated by capacitance spectroscopy

Low temperature depletion capacitance-voltage data, taken from a novel open design of surface superlattice fabricated on a GaAs/AlGaAs heterostructure, are compared with two theoretical models. These assume either that the Fermi level on the free semiconductor surface is pinned, or that the surface...

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Bibliographic Details
Published in:Superlattices and microstructures 1999-01, Vol.25 (1-2), p.285-288
Main Authors: Ali, K., Skuras, E., Vallis, S., Long, A.R., Larkin, I.A., Davies, J.H., Holland, M.C., Mongy, A.Abd-El
Format: Article
Language:English
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Summary:Low temperature depletion capacitance-voltage data, taken from a novel open design of surface superlattice fabricated on a GaAs/AlGaAs heterostructure, are compared with two theoretical models. These assume either that the Fermi level on the free semiconductor surface is pinned, or that the surface charge state is unaltered (frozen) when the superlattices are biased. The data are in much better agreement with the frozen surface model.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1998.0649