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Behaviour of surface states on a GaAs/AlGaAs heterostructure investigated by capacitance spectroscopy

Low temperature depletion capacitance-voltage data, taken from a novel open design of surface superlattice fabricated on a GaAs/AlGaAs heterostructure, are compared with two theoretical models. These assume either that the Fermi level on the free semiconductor surface is pinned, or that the surface...

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Published in:Superlattices and microstructures 1999-01, Vol.25 (1-2), p.285-288
Main Authors: Ali, K., Skuras, E., Vallis, S., Long, A.R., Larkin, I.A., Davies, J.H., Holland, M.C., Mongy, A.Abd-El
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Language:English
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container_end_page 288
container_issue 1-2
container_start_page 285
container_title Superlattices and microstructures
container_volume 25
creator Ali, K.
Skuras, E.
Vallis, S.
Long, A.R.
Larkin, I.A.
Davies, J.H.
Holland, M.C.
Mongy, A.Abd-El
description Low temperature depletion capacitance-voltage data, taken from a novel open design of surface superlattice fabricated on a GaAs/AlGaAs heterostructure, are compared with two theoretical models. These assume either that the Fermi level on the free semiconductor surface is pinned, or that the surface charge state is unaltered (frozen) when the superlattices are biased. The data are in much better agreement with the frozen surface model.
doi_str_mv 10.1006/spmi.1998.0649
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title Behaviour of surface states on a GaAs/AlGaAs heterostructure investigated by capacitance spectroscopy
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