Coulomb blockade: Poisson versus Pauli in a silicon quantum box

We discuss the limitations of the orthodox Coulomb-blockade theory when applied to silicon quantum dots in the nanometer range and we present a simple Poisson–Schrödinger model to evaluate the quantum contribution in these cases. This contribution can be seen as a quantum capacitance in series with...

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Bibliographic Details
Published in:Solid-state electronics 1999, Vol.43 (6), p.1147-1151
Main Authors: Palun, L, Lamouche, G, Fishman, G
Format: Article
Language:English
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Summary:We discuss the limitations of the orthodox Coulomb-blockade theory when applied to silicon quantum dots in the nanometer range and we present a simple Poisson–Schrödinger model to evaluate the quantum contribution in these cases. This contribution can be seen as a quantum capacitance in series with the sum of capacitance around the dot. This simple model gives results similar to a more sophisticated one which includes Pauli principle, with a precision of the order of room-temperature thermal–energy kT. Finally we show that the simple model can be easily included in micro-electronic simulators and therefore can be very effective to predict new properties of future quantum devices. All the effects discussed in this paper are room-temperature effects.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(99)00038-6