Confinement versus localization for quantum wells and quantum wires in a self-assembled structure

We investigate the effects of interface localization due to microroughness in a sample presenting a quantum well and a quantum wire. The magnetoshift of the emission lines measured at different temperatures are analysed using a model where the average effect of the microroughness is represented by a...

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Bibliographic Details
Published in:Superlattices and microstructures 1999-01, Vol.25 (1-2), p.137-141
Main Authors: Rasnik, I., Rego, L.G.C., Marquezini, M.V., Triques, A.L.C., Brasil, M.J.S.P., Brum, J.A., Cotta, M.A.
Format: Article
Language:English
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Summary:We investigate the effects of interface localization due to microroughness in a sample presenting a quantum well and a quantum wire. The magnetoshift of the emission lines measured at different temperatures are analysed using a model where the average effect of the microroughness is represented by a Gaussian defect. We obtain a quantitative estimate of the exciton localization due to the microroughness. As the temperature increases the excitons are released from the weak localized defects. Time-resolved luminescence results corroborate this interpretation.
ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1998.0626