PROPERTY IMPROVEMENT OF 75 NM-THICK DIRECTLY-CRYSTALLIZED SrBi2Ta2O9 THIN FILMS BY PULSE-INTRODUCED METALORGANIC CHEMICAL VAPOR DEPOSITION AT LOW TEMPERATURE

Crystallized SrBi2Ta2O9 (SBT) films were deposited on (111) Ir/TiO2/SiO2/Si substrates at 650 C by MOCVD. Crystallized SBT films from 75 to 200 nm in thickness were directly deposited, but its remanent polarization (Pr) decreased when the film thickness decreased for the film deposited by convention...

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Bibliographic Details
Published in:Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 7B, pp. L758-L760. 2001 Part 2. Vol. 40, no. 7B, pp. L758-L760. 2001, 2001-01, Vol.40 (7B), p.L758-L760
Main Authors: Mitsuya, M, Nukaga, N, Watanabe, T, Funakubo, H, Saito, K
Format: Article
Language:English
Online Access:Get full text
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Summary:Crystallized SrBi2Ta2O9 (SBT) films were deposited on (111) Ir/TiO2/SiO2/Si substrates at 650 C by MOCVD. Crystallized SBT films from 75 to 200 nm in thickness were directly deposited, but its remanent polarization (Pr) decreased when the film thickness decreased for the film deposited by conventional continuous-MOCVD. This Pr value was increased by 50% by using the source gas pulse-introduction technique (pulse-MOCVD) at 75 nm thicknesses. Moreover, the leakage current was improved to be on the order of 10-5 A/cm2 up to 600 kV/cm. This film exhibited strong (103) orientation of the crystal axis, while the continuous gas-introduced film showed a mixture of (00l) and (103) orientations. 10 refs.
ISSN:0021-4922
DOI:10.1143/jjap.40.L758