Proton damage in advanced laser diodes

Proton radiation damage in laser diodes is investigated for several types of laser diodes with wavelengths from 650 to 1550 nm. Key parameters include slope efficiency, threshold current, and the transition characteristics between laser-emitting diode (LED) and laser operation. Some of the devices e...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2001-12, Vol.48 (6), p.1764-1772
Main Authors: Johnston, A.H., Miyahira, T.F., Rax, B.G.
Format: Article
Language:English
Subjects:
Annealing
Diode lasers
Diodes
Laser cavities
Laser diodes
Laser transitions
Lasers
Lattices
Optical materials
Proton damage
Protons
Radiation damage
Radiative recombination
Semiconductor lasers
Surface emitting lasers
Threshold current
Threshold currents
Vertical cavity surface emitting lasers
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Summary:Proton radiation damage in laser diodes is investigated for several types of laser diodes with wavelengths from 650 to 1550 nm. Key parameters include slope efficiency, threshold current, and the transition characteristics between laser-emitting diode (LED) and laser operation. Some of the devices exhibited nonlinear relationships between threshold current and proton fluence. All of the lasers, including vertical-cavity surface-emitting lasers, were strongly affected by recombination-enhanced annealing, in contrast to double-heterojunction LEDs, which are only slightly affected by annealing. Analysis of laser characteristics after irradiation showed that the main effect of radiation damage is an increase in bulk recombination that increases loss within the laser cavity.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.983128